A new method to calculate leakage current and its applications for sub-45nm MOSFETs

Author

Lujan, G.S. ; Magnus, W. ; Sorée, B. ; Pourghaderi, M.A. ; Veloso, A. ; van Da, M.J.H. ; Lauwers, A. ; Kubicek, S. ; De Gendt, S. ; Heyns, M. ; De Meyer, K.

Author_Institution

IMEC, Leuven, Belgium

fYear

2005

fDate

12-16 Sept. 2005

Firstpage

489

Lastpage

492

Abstract

This paper proposes a new quantum mechanical model for the calculation of leakage currents. The model incorporates both variational calculus and the transfer matrix method to compute the subband energies and the life times of the inversion layer states. The use of variational calculus simplifies the subband energy calculation due to the analytical form of the wave functions, which offers an attractive perspective towards the calculation of the electron mobility in the channel. The model can be extended to high-k dielectrics with several layers. Good agreement between experimental data and simulation results is obtained for metal gate capacitors.

Keywords

MOSFET; Rayleigh-Ritz methods; calculus; electron mobility; high-k dielectric thin films; inversion layers; leakage currents; matrix algebra; semiconductor device breakdown; semiconductor device models; MOSFET; electron mobility; high-k dielectrics; inversion layer states; leakage current; life times; metal gate capacitors; quantum mechanical model; subband energies; transfer matrix method; variational calculus; wave functions; Calculus; Capacitance; Electrodes; Electrons; High-K gate dielectrics; Leakage current; MOSFETs; Resonance; Tunneling; Wave functions;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Device Research Conference, 2005. ESSDERC 2005. Proceedings of 35th European

Print_ISBN

0-7803-9203-5

Type

conf

DOI

10.1109/ESSDER.2005.1546691

Filename

1546691