Title :
Simulation with ideal switch models combined with measured loss data provides a good estimate of power loss
Author :
Munk-Nielsen, Stig ; Tutelea, Lucian N. ; Jæger, Ulrik
Author_Institution :
Inst. of Energy Technol., Aalborg Univ., Denmark
Abstract :
Ideally, converter losses should be determined without using an excessive amount of simulation time. State-of-the-art power semiconductor models provide good accuracy; unfortunately they often require a very long simulation time. This paper describes how to estimate power losses from simulation using ideal switches combined with measured power loss data. The semiconductor behavior is put into a look-up table, which replaces the advanced semiconductor models and shortens the simulation time. To extract switching and conduction losses, converter is simulated and the semiconductor power losses are estimated. Measurement results on a laboratory converter are compared with the estimated losses and a good agreement is shown. Using the ideal switch simulation and the post processing power estimation program, a ten to twenty fold increase in simulation speed is obtained, compared to simulations using advanced models of semiconductors
Keywords :
insulated gate bipolar transistors; loss measurement; parameter estimation; power convertors; power semiconductor switches; semiconductor device models; IGBT; conduction losses; converter losses; ideal switch models; ideal switch simulation; look-up table; measured loss data; post processing power estimation program; power loss estimation; semiconductor behavior; semiconductor power losses; simulation time; state-of-the-art power semiconductor models; Energy loss; Loss measurement; Power dissipation; Power electronics; Power semiconductor switches; Semiconductor diodes; Table lookup; Testing; Thermal stresses; Voltage;
Conference_Titel :
Industry Applications Conference, 2000. Conference Record of the 2000 IEEE
Conference_Location :
Rome
Print_ISBN :
0-7803-6401-5
DOI :
10.1109/IAS.2000.882580