DocumentCode :
2609366
Title :
Monolithic tandem solar cell based on GaAlAs-GaAs system
Author :
Mayet, L. ; Gavand, M. ; Montégu, B. ; Boyeaux, J. ; Laugier, A.
Author_Institution :
Lab. de Phys. de la Matiere, Villeurbanne, France
fYear :
1990
fDate :
21-25 May 1990
Firstpage :
64
Abstract :
Low and medium concentrations (10 to 50 suns) are a suitable way to improve the efficiency of solar cells without the expensive two-axis concentrators. The open circuit voltage, Voc, rapidly increases for the lower concentrations, while a good value of the fill factor is achieved when a large ratio of the dark current at Voc is from the diffusion current, i.e., in the 30-100-suns range for the AlGaAs and GaAs solar cells. For tandem solar cells, a 40% efficiency can be theoretically exceeded under moderate sunlight concentration. Some improvements to a linear three-terminal solar cell built on a GaAs substrate are described. The first junction is formed by two GaAs layers, Sn and Ge doped, grown by liquid phase epitaxy (LPE) on a p+Zn-doped substrate. Then a thick Sn-doped Al0.32Ga0.68As (about 10 μm) is grown. Finally, a thin graded AlGaAs window layer is deposited by isothermal contact between the solid and the Be-doped melt corresponding to Al0.85Ga0.15As solid. During the contact, Be diffuses into the Al0.32Ga0.68As layer to form the upper junction of the device. The total efficiency of the device is 26.6% at 40 AM1.5D
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; liquid phase epitaxial growth; semiconductor growth; solar cells; solar energy concentrators; 10 micron; 26.6 percent; 40 percent; GaAlAs-GaAs; dark current; diffusion current; fill factor; isothermal contact; liquid phase epitaxy; monolithic; open circuit voltage; semiconductors; solar energy concentrators; substrate; tandem solar cell; window layer; Circuits; Dark current; Epitaxial growth; Gallium arsenide; Photovoltaic cells; Solids; Substrates; Sun; Tin; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialists Conference, 1990., Conference Record of the Twenty First IEEE
Conference_Location :
Kissimmee, FL
Type :
conf
DOI :
10.1109/PVSC.1990.111592
Filename :
111592
Link To Document :
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