Title :
Physical study of the power diode turn-on process
Author_Institution :
Dept. of Electr. Power Syst., R. Inst. of Technol., Stockholm, Sweden
Abstract :
The power diode turn-on process has been investigated in detail. The study was performed by numerical device simulation (MEDICI), allowing analysis of the inner physics associated with the turn-on effect. In particular, the importance of considering both diffusion and drift current density terms during forward recovery at low injection conditions is shown. It is also shown that the commonly used ambipolar transport equation (ATE) cannot correctly describe this process. Instead, a more general transport equation is proposed which is valid during the turn-on phase, but also at all injection levels, i.e. full cycle of device operation
Keywords :
carrier mobility; current density; minority carriers; power semiconductor diodes; semiconductor device models; MEDICI; ambipolar transport equation; diffusion; drift current density; finite element method device simulator; forward recovery; general transport equation; inner physics; low injection conditions; minority carriers; numerical device simulation; power diode turn-on process; turn-on effect; turn-on phase; Charge carrier processes; Conductivity; Current density; Electron mobility; Equations; Insulated gate bipolar transistors; Medical simulation; Numerical simulation; Semiconductor diodes; Voltage;
Conference_Titel :
Industry Applications Conference, 2000. Conference Record of the 2000 IEEE
Conference_Location :
Rome
Print_ISBN :
0-7803-6401-5
DOI :
10.1109/IAS.2000.882583
