Title :
Degradation Model for Device Reliability
Author_Institution :
International Business Machines Corporation, F91/052, P.O. Box 390, Poughkeepsie, N. Y. 12602
Abstract :
The model assumes that, under a constant or cyclic stress, device degradation rate is proportional to the existing degradation. The proportionality constant is a positively distributed random variable. The distribution of the amount of degradation tends to be asymptotically lognormal. The general form of the life distribution is derived. Application of this model has been made in analyzing degradation data in thermal resistance, diode leakage, and transistor gain.
Keywords :
Assembly; Condition monitoring; Fatigue; Life testing; Pollution measurement; Random variables; Schottky diodes; Stress; Thermal degradation; Thermal resistance;
Conference_Titel :
Reliability Physics Symposium, 1980. 18th Annual
Conference_Location :
Las Vegas, NV, USA
DOI :
10.1109/IRPS.1980.362911