Title :
Characterisation of 4H-SiC Schottky diodes for IGBT applications
Author :
Johnson, C.M. ; Rahimo, M. ; Wright, N.G. ; Hinchley, D.A. ; Horsfall, A.B. ; Morrison, D.J. ; Knights, A.
Author_Institution :
Dept. of Electr. & Electron. Eng., Newcastle upon Tyne Univ., UK
Abstract :
Si fast recovery diodes currently limit the performance of many IGBT powered systems. In this paper SiC Schottky diodes are proposed as an alternative technology. High current SiC devices are achieved by parallel connection of a large number of small elements. The static and dynamic performance of the SiC Schottky diodes is evaluated and comparisons made with Si PIN diodes at currents of up to 20 A and DC link voltages of up to 600 V. The results demonstrate the effectiveness of the SiC devices in reducing the overall system losses and the levels of EMI generated by switching transitions
Keywords :
Schottky diodes; electromagnetic interference; insulated gate bipolar transistors; interference suppression; losses; semiconductor materials; silicon compounds; 20 A; 4H-SiC Schottky diodes; 600 V; DC link voltages; EMI levels reduction; IGBT applications; Si PIN diodes; Si fast recovery diodes; SiC; dynamic performance; high current SiC diodes; parallel connection; static performance; switching transitions; system losses reduction; Circuits; Frequency; Insulated gate bipolar transistors; Power electronics; Power engineering and energy; Schottky diodes; Semiconductor diodes; Silicon carbide; Switches; Voltage;
Conference_Titel :
Industry Applications Conference, 2000. Conference Record of the 2000 IEEE
Conference_Location :
Rome
Print_ISBN :
0-7803-6401-5
DOI :
10.1109/IAS.2000.882584
