Title :
Very low power circuit design: fundamentals and limits
Author_Institution :
Swiss Center for Electron. & Microtechnol. Inc., Neuchatel, Switzerland
Abstract :
After a few remarks on process requirements, a model of the MOS transistor adapted to analog design down to very low current is presented. The limitations and special properties of the transistor operated at low current and low voltage are discussed. The special problems and solutions encountered in very low-power circuits are illustrated by means of basic circuit techniques
Keywords :
CMOS analogue integrated circuits; MOSFET; integrated circuit design; integrated circuit modelling; integrated circuit noise; semiconductor device models; LV operation; MOS transistor; MOSFET; analog design; model; very low current; very low-power circuits; Batteries; CMOS process; Circuit synthesis; Energy consumption; Instruments; Low voltage; MOSFETs; Threshold voltage; Very large scale integration; Watches;
Conference_Titel :
Circuits and Systems, 1993., ISCAS '93, 1993 IEEE International Symposium on
Conference_Location :
Chicago, IL
Print_ISBN :
0-7803-1281-3
DOI :
10.1109/ISCAS.1993.394004
