DocumentCode
2609407
Title
AC-SONOS: a single-poly, assist-charge induced source-side-injection SONOS low power nonvolatile memory
Author
Lee, Ming-Hsiu ; Wu, Jau-Yi ; Kuo, Ming-Chang ; Hsu, Tzu-Hsuan ; Lung, Hsiang-Lan ; Huang, Tiao-Yuan ; Liu, Rich ; Lu, Chih-Yuan
Author_Institution
Macronix Int. Co., Ltd., Hsinchu, Taiwan
fYear
2005
fDate
12-16 Sept. 2005
Firstpage
505
Lastpage
508
Abstract
A novel SONOS memory with an assist-charge (AC) structure is proposed to achieve both fast cell programming time of 0.1μs and low programming current (<10μ).The assist-charge serves the function of a split gate and it electrically emulates programming by source-side injection (SSI). This very simple single-poly structure shows good promise for future low power, high speed and high-density applications.
Keywords
low-power electronics; semiconductor storage; semiconductor-insulator-semiconductor devices; silicon compounds; 0.1 mus; AC-SONOS; assist-charge structure; low power nonvolatile memory; single-poly structure; source-side injection; CMOS technology; Channel hot electron injection; Fabrication; Hot carriers; Lungs; Nonvolatile memory; SONOS devices; Split gate flash memory cells; Tunneling; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Device Research Conference, 2005. ESSDERC 2005. Proceedings of 35th European
Print_ISBN
0-7803-9203-5
Type
conf
DOI
10.1109/ESSDER.2005.1546695
Filename
1546695
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