Title :
PSPICE implementation of a new electro-thermal model for high power diodes
Author :
Profumo, F. ; Facelli, S. ; Passerini, B. ; Giordano, S.
Author_Institution :
Dipt. di Ingegneria Elettrica, Politecnico di Torino, Italy
Abstract :
In this paper, a new PSPICE implemented electrothermal model of high power diodes is described. The model is based on an approximated solution of the minority carriers diffusion equation. In the first part of the paper, the model is briefly described pointing out the assumptions on which it is based and describing the implementation approach. Then, the model is validated by means of comparison with experimental measurements and with the results obtained from the other two reference models
Keywords :
SPICE; carrier lifetime; minority carriers; power semiconductor diodes; semiconductor device models; thermal analysis; PSPICE; electro-thermal model; high power diodes; minority carriers diffusion equation; reference models; transient thermal impedance model; Circuit simulation; Computational modeling; Electronic mail; Equations; Power electronics; Power system modeling; Power system reliability; Predictive models; SPICE; Semiconductor diodes;
Conference_Titel :
Industry Applications Conference, 2000. Conference Record of the 2000 IEEE
Conference_Location :
Rome
Print_ISBN :
0-7803-6401-5
DOI :
10.1109/IAS.2000.882586
