Title :
Advanced ring type contact technology for high density phase change memory
Author :
Song, Y.J. ; Park, Jae-Hyun ; Lee, S.Y. ; Jae-Hyun Park ; Hwang, Y.N. ; Lee, S.-H. ; Ryoo, K.C. ; Ahn, S.J. ; Jeong, C.W. ; Shin, J.M. ; Jeong, W.C. ; Koh, K.H. ; Jeong, G.T. ; Jeong, H.S. ; Kim, K.N.
Abstract :
Advanced bottom electrode contact (BEC) scheme was successfully developed for fabricating reliable high density 64 Mb PRAM by using ring type contact scheme. This advanced ring type BEC scheme was prepared by depositing very thin TiN films inside a contact hole, and then core dielectrics was uniformly filled into the TiN-deposited contact hole. Using this novel contact scheme, it was possible to reduce a reset current with low set resistance, and also maintain a uniform cell distribution. Thus, it is clearly demonstrated that the ring type BEC technology can exhibit strong feasibility of high density 256 Mb PRAM and beyond.
Keywords :
random-access storage; semiconductor storage; tin compounds; 256 MByte; 64 MByte; PRAM; TiN; bottom electrode contact scheme; contact hole; core dielectrics; high density phase change memory; ring type contact technology; thin films; Amorphous materials; Contact resistance; Crystallization; Dielectric thin films; Electrodes; Nonvolatile memory; Phase change memory; Phase change random access memory; Scalability; Tin;
Conference_Titel :
Solid-State Device Research Conference, 2005. ESSDERC 2005. Proceedings of 35th European
Print_ISBN :
0-7803-9203-5
DOI :
10.1109/ESSDER.2005.1546697
