Title :
Optimized optical variables of 1.3µm GaInNAs/GaAs quantum well semiconductor laser
Author :
Mitani, S.M. ; Alias, M.S. ; Manaf, A.A. ; Exhsan, F.M. ; Mat, A.F.A.
Author_Institution :
Microelectron. & Nanotechnol. Program, TM Innovation Centre, Cyberjaya, Malaysia
Abstract :
A quality improvement of the III-V dilute nitride semiconductor alloy, GaInNAs, grown on a GaAs substrate with different aperture sizes and nitrogen contents is reported for 1.31 μm wavelength lasers. It is expected that for GaInNAs, which is lattice matched to InP, band gaps from ≈0.3-0.7 eV should be achievable if a few percent of N could be incorporated to the structure. In this communication, we report the influence of nitrogen incorporation on the microstructure of dilute nitride films as well as the influence of the aperture size. The PL spectrum and material optical gain for GaInNAs with different N percentage have been investigated. The LI curve, optical power, wave intensity as well as threshold current for various aperture sizes have been reported.
Keywords :
III-V semiconductors; energy gap; gallium arsenide; gallium compounds; indium compounds; laser cavity resonators; photoluminescence; quantum well lasers; semiconductor thin films; surface emitting lasers; wide band gap semiconductors; GaxIn1-xNyAs1-y-GaAs; PL spectrum; aperture size; band gap; dilute nitride films; microstructure; optical gain; optical power; optical wave intensity; optimized optical variables; quantum well semiconductor laser; threshold current; vertical-cavity surface-emitting laser device structure; wavelength 1.3 mum; Artificial neural networks; Integrated circuits; Lasers; Nitrogen; GaInNAs; quantum-well devices; surface emitting lasers;
Conference_Titel :
Photonics (ICP), 2010 International Conference on
Conference_Location :
Langkawi, Kedah
Print_ISBN :
978-1-4244-7186-7
DOI :
10.1109/ICP.2010.5604424
