New results in hetero-epitaxy of GaAs/Ge/Si for high efficiency III-V solar cells on low cost substrates

Author

Leycuras, A. ; Vilela, M.F. ; Grenet, J. ; Strobl, G. ; Leroux, M. ; Neu, G. ; Vèrié, C.

Author_Institution

Lab. de Phys. du Solide et Energie Solaire, CNRS, Valbonne, France

fYear

1990

fDate

21-25 May 1990

Firstpage

95

Abstract

The chemical vapor deposition (CVD) heteroepitaxy of germanium on silicon has been carefully controlled for the improvement of the epitaxial layer crystalline quality. Double-crystal X-ray diffraction rocking curves exhibit FMWH values as low as 65 arcsec on 2.8 μm thick, mirrorlike germanium layers are obtained. Structural, optical, and electronic properties of GaAs grown on these Ge/Si substrates by metalorganic vapor phase epitaxy (MOVPE) are presented and discussed. A minority carrier lifetime of 3 ns shows that these GaAs/(Ge/Si) structures are applicable to photovoltaic applications

Keywords

Ge-Si alloys; III-V semiconductors; gallium arsenide; semiconductor growth; solar cells; vapour phase epitaxial growth; 2.8 micron; 3 ns; GaAs-Ge-Si; X-ray diffraction rocking curves; chemical vapor deposition; epitaxial layer crystalline quality; heteroepitaxy; metalorganic vapor phase epitaxy; minority carrier lifetime; semiconductors; solar cells; substrates; Chemical vapor deposition; Crystallization; Epitaxial growth; Epitaxial layers; Gallium arsenide; Germanium; Optical diffraction; Silicon; Substrates; X-ray diffraction;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialists Conference, 1990., Conference Record of the Twenty First IEEE

Conference_Location

Kissimmee, FL

Type

conf

DOI

10.1109/PVSC.1990.111598

Filename

111598