Title :
Various doping concentration effect on silicon-on-insulator (SOI) phase modulator
Author :
Mardiana, B. ; Hazura, H. ; Hanim, A.R. ; Shaari, Sahbudin ; Abdullah, Huda
Author_Institution :
Durian Tunggal Post Office, Univ. Teknikal Malaysia Melaka, Durian Tunggal, Malaysia
Abstract :
This paper reports the effect of doping concentration to the electrical characteristic performance of the phase modulator in the carrier injection mode at wavelength 1.55μm. The phase modulator device has been integrated in the silicon-on-insulator (SOI) rib waveguide with the p-i-n diode structure. The electrical device performance is predicted using the 2-D semiconductor package SILVACO (CAD) software under DC operation. The least doping concentration of p+ and n+ region produces the least change of refractive index of the modulator. Meanwhile, results show that by increasing the doping concentrations, the value of Iπ decreases. This means that the phase modulator performance is better with increased doping concentrations.
Keywords :
doping profiles; electro-optical modulation; integrated optics; light refraction; optical waveguides; p-i-n diodes; phase modulation; rib waveguides; silicon-on-insulator; 2D semiconductor package SILVACO software; Si; carrier injection mode; doping concentration effect; p-i-n diode structure; refractive index; silicon-on-insulator phase modulator; silicon-on-insulator rib waveguide; wavelength 1.55 mum; Doping; Mathematical model; Optical waveguides; Phase modulation; Refractive index; Silicon; Phase modulator; Silicon-on-Insulator; carrier injection; refractive index change;
Conference_Titel :
Photonics (ICP), 2010 International Conference on
Conference_Location :
Langkawi
Print_ISBN :
978-1-4244-7186-7
DOI :
10.1109/ICP.2010.5604428
