Title :
STI-induced damage and hot-carrier reliability in the narrow width short channel NMOSFET fabricated using global strained-Si technology
Author :
Phua, W.H.T. ; Ang, D.S. ; Ling, C.H. ; Chui, K.J.
Author_Institution :
Dept. of Electr. & Electron. Eng., Singapore Nat. Univ., Singapore
Abstract :
The width dependence of threshold voltage (Vt) in the strained-Si NMOSFET relative to that of the control bulk Si device is examined. The contrasting behavior of Vt, for decreasing channel width (Wdrawn) at a given channel length (Ldrawn), could be ascribed to the increased concentration of the channel dopant at the regions near the STI (shallow trench isolation)/gate edge of the strained device. Dopant enhancement is attributed to the abundance of interstitial defect sites located in both the strained-Si and the SiGe layer, due to the lattice strain arising from the STI process. Hot-carrier degradation is found to be marginally higher in the narrow-width strained device.
Keywords :
Ge-Si alloys; MOSFET; elemental semiconductors; hot carriers; isolation technology; semiconductor device reliability; semiconductor doping; silicon; NMOSFET; SiGe; channel dopant; hot carrier degradation; interstitial defect sites; lattice strain; reliability; shallow trench isolation; strained Si technology; Capacitive sensors; Degradation; Germanium silicon alloys; Hot carriers; Lattices; MOSFET circuits; Silicon germanium; Strain control; Threshold voltage; Voltage control;
Conference_Titel :
Solid-State Device Research Conference, 2005. ESSDERC 2005. Proceedings of 35th European
Print_ISBN :
0-7803-9203-5
DOI :
10.1109/ESSDER.2005.1546702