Title :
Three-dimensional atomistic simulation of carbon nanotube FETs with realistic geometry
Author :
Fiori, Gianluca ; Iannaccone, Giuseppe ; Lundstrom, Mark ; Klimeck, Gerhard
Author_Institution :
Dipt. di Ingegneria dell´´Informazione, Univ. di Pisa, Italy
Abstract :
A three-dimensional simulation approach for the investigation of carbon nanotube field effect transistors (CNTFETs) is presented, based on the self-consistent solution of the 3D Poisson-Schrodinger equation with open boundary conditions, within the non-equilibrium Green´s function formalism. This approach enables accurate simulations of transport through ballistic CNTFETs for generic device structures, eliminating the use of ideal geometries, such as coaxial devices, often used in order to simplify the electrostatics of the device.
Keywords :
Green´s function methods; Poisson equation; Schrodinger equation; ballistic transport; carbon nanotubes; electrostatics; field effect transistors; nanotube devices; semiconductor device models; 3D Poisson-Schrodinger equation; 3D atomistic simulation; carbon nanotube FET; coaxial devices; electrostatics; generic device structures; non equilibrium Green function formalism; realistic geometry; Boundary conditions; Charge carrier processes; Coaxial components; Computational geometry; Computational modeling; Electrostatics; FETs; Poisson equations; Silicon; Solid modeling;
Conference_Titel :
Solid-State Device Research Conference, 2005. ESSDERC 2005. Proceedings of 35th European
Print_ISBN :
0-7803-9203-5
DOI :
10.1109/ESSDER.2005.1546703
