Title :
Improving DC and AC characteristics of ohmic contact carbon nanotube field effect transistors
Author :
Pourfath, M. ; Kosina, H. ; Cheong, B.H. ; Park, W.J. ; Selberherr, S.
Author_Institution :
Inst. for Microelectron., TU Vienna, Wien, Austria
Abstract :
A study of ohmic contact carbon nanotube field effect transistors is presented. The effect of the gate-drain spacer on the DC and AC response of the device was studied. Simulation results suggest that by appropriately selecting the gate-drain spacer both the DC and AC characteristics of the device are improved.
Keywords :
carbon nanotubes; field effect transistors; ohmic contacts; AC response; DC response; carbon nanotube field effect transistors; gate-drain spacer; ohmic contact; CNTFETs; Carbon nanotubes; Computational modeling; Electrons; FETs; Mechanical factors; Ohmic contacts; Organic materials; Poisson equations; Schottky barriers;
Conference_Titel :
Solid-State Device Research Conference, 2005. ESSDERC 2005. Proceedings of 35th European
Print_ISBN :
0-7803-9203-5
DOI :
10.1109/ESSDER.2005.1546704
