Title :
Behaviour of IGBT modules under short circuit conditions
Author :
Palmer, P.R. ; Rajamani, H.S. ; Joyce, J.C.
Author_Institution :
Dept. of Eng., Cambridge Univ., UK
Abstract :
In large IGBT modules, IGBT chips are normally paralleled to give the current ratings required. Current sharing between these individual chips has previously been investigated for normal switching operation. In this paper, current sharing during short circuit conditions is studied. The test rig is described and test results are given. The oscillation in the short circuit currents, observed at particular voltages, is also analysed
Keywords :
insulated gate bipolar transistors; modules; power bipolar transistors; semiconductor device measurement; semiconductor device testing; short-circuit currents; IGBT chips; IGBT modules behaviour; current ratings; short circuit conditions; short circuit currents oscillation; switching operation; test rig; Capacitors; Circuit faults; Circuit testing; Current measurement; Insulated gate bipolar transistors; Resistors; Semiconductor device measurement; Short circuit currents; Steady-state; Voltage;
Conference_Titel :
Industry Applications Conference, 2000. Conference Record of the 2000 IEEE
Conference_Location :
Rome
Print_ISBN :
0-7803-6401-5
DOI :
10.1109/IAS.2000.882594
