DocumentCode
2609594
Title
Behaviour of IGBT modules under short circuit conditions
Author
Palmer, P.R. ; Rajamani, H.S. ; Joyce, J.C.
Author_Institution
Dept. of Eng., Cambridge Univ., UK
Volume
5
fYear
2000
fDate
2000
Firstpage
3010
Abstract
In large IGBT modules, IGBT chips are normally paralleled to give the current ratings required. Current sharing between these individual chips has previously been investigated for normal switching operation. In this paper, current sharing during short circuit conditions is studied. The test rig is described and test results are given. The oscillation in the short circuit currents, observed at particular voltages, is also analysed
Keywords
insulated gate bipolar transistors; modules; power bipolar transistors; semiconductor device measurement; semiconductor device testing; short-circuit currents; IGBT chips; IGBT modules behaviour; current ratings; short circuit conditions; short circuit currents oscillation; switching operation; test rig; Capacitors; Circuit faults; Circuit testing; Current measurement; Insulated gate bipolar transistors; Resistors; Semiconductor device measurement; Short circuit currents; Steady-state; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Industry Applications Conference, 2000. Conference Record of the 2000 IEEE
Conference_Location
Rome
ISSN
0197-2618
Print_ISBN
0-7803-6401-5
Type
conf
DOI
10.1109/IAS.2000.882594
Filename
882594
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