Nanoscale capacitors based on metal-insulator-carbon nanotube-metal (MICNM) structures

We report on the electrical characteristics and the fabrication process of a nano-capacitor structure using metal-insulator-carbon nanotube-metal (MICNM) layers. The structure shows high capacitance and the possibility of ultra high integration density due to the unique nanotube structure. Nanoscale and high aspect ratio patterns are achieved by electron beam lithography for the fabrication of these vertical nanostructures. This structure can be applied to the substitution of capacitors employing the silicon pillar structure in dynamic random access memory (DRAM) or as a nanoscale capacitor for various nanoelectronic devices.