Title :
High efficiency GaAs solar cells using GaInP2 window layers
Author :
Kurtz, Sarah ; Olson, J. ; Kibbler, A.
Author_Institution :
Solar Energy Res. Inst. Golden, CO, USA
Abstract :
GaAs single-junction solar cells using Ga0.5In0.5 P and having 1 sun, an air mass (AM) of 1.5, and global efficiencies of 25.0-25.7% are reported. The open-circuit voltage (Voc), short-circuit current (Jsc), and fill factor (ff) for the 25.7% efficient cell were 1.039 V, 28.5 mA/cm 2, and 86.8%, respectively. The devices were grown at 700°C using conventional atmospheric pressure metalorganic chemical vapor deposition (MOCVD). The antireflection coating is a double layer of MgF2 and ZnS. Voc´s as high as 1.055 V were obtained for some of the devices. This high Voc is attributed to the low interface recombination velocity of the Ga0.5In0.5P-GaAs heterointerface. Factors that affect the efficiency of this device, including the thickness and composition of the Ga0.5In0.5P window layer, are presented and discussed
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; semiconductor growth; solar cells; vapour phase epitaxial growth; 1.039 V; 1.055 V; 25 to 25.7 percent; 700 degC; GaAs-Ga0.05In0.5P; MgF2-ZnS; air mass; antireflection coating; fill factor; heterointerface; interface recombination velocity; metalorganic chemical vapor deposition; open-circuit voltage; semiconductors; short-circuit current; solar cells; window layers; Coatings; Gallium arsenide; Lattices; MOCVD; Organic chemicals; Photonic band gap; Photovoltaic cells; Sun; Voltage; Zinc compounds;
Conference_Titel :
Photovoltaic Specialists Conference, 1990., Conference Record of the Twenty First IEEE
Conference_Location :
Kissimmee, FL
DOI :
10.1109/PVSC.1990.111605
