DocumentCode :
2609678
Title :
Two-photon photoluminescence induced defects on InGaN crystal and light emitting diodes
Author :
Noor, A.S.M. ; Abidin, M.S.Z. ; Kawata, Y.
Author_Institution :
Dept. of Comput. & Commun. Syst. Eng., Univ. Putra Malaysia, Serdang, Malaysia
fYear :
2010
fDate :
5-7 July 2010
Firstpage :
1
Lastpage :
4
Abstract :
Two-photon excitation techniques used in fabricating lines defects were done on a light emitting diode chip. Simultaneous detection of a quenched wide-gap semiconductor crystal has been observed using single- and two-photon photoluminescence. It was found at the quenched area, single-photon excitation gives photoluminescence read-out compared to two-photon excitation which no photoluminescence detected at the bandgap wavelength. This is due to the excitation states which the transition of electron for two-photon excitation to occur have been demolished by the annealing of the sample which involved two-photon quenching process. The dependency of excitation power with respective photoluminescence is elaborated to confirmed the single- and two-photon excitation photoluminescence methods.
Keywords :
III-V semiconductors; annealing; crystal defects; gallium compounds; indium compounds; light emitting diodes; photoexcitation; photoluminescence; radiation quenching; two-photon processes; wide band gap semiconductors; InGaN; annealing; crystal defects; excitation power; light emitting diode chip; quenched wide-gap semiconductor crystal; two-photon excitation; two-photon photoluminescence; Crystals; Fabrication; Lenses; Light emitting diodes; Photoluminescence; Photonic band gap; Two-photon; photoluminescence; quenching; single-photon;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photonics (ICP), 2010 International Conference on
Conference_Location :
Langkawi, Kedah
Print_ISBN :
978-1-4244-7186-7
Type :
conf
DOI :
10.1109/ICP.2010.5604436
Filename :
5604436
Link To Document :
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