DocumentCode
2609685
Title
A Large Scale Reliability Study of Burnout Failure in GaAs Power FETs
Author
Jordan, A.S. ; Irvin, J.C. ; Schlosser, W.O.
Author_Institution
Bell Laboratories, Murray Hill, New Jersey 07974
fYear
1980
fDate
29312
Firstpage
123
Lastpage
133
Abstract
Burnout can be the dominant failure mode in GaAs power FETs. Since this is a process without electrical precursors, special experimental and statistical treatment appropriate to censored data has to be employed. The resulting failure distribution is log-normal and depending on the operating conditions a maximum failure rate between 400 and 4500 FITs is projected.
Keywords
Aging; Costs; Electron tubes; FETs; Gallium arsenide; Large-scale systems; Power system reliability; Process design; Semiconductor device reliability; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium, 1980. 18th Annual
Conference_Location
Las Vegas, NV, USA
ISSN
0735-0791
Type
conf
DOI
10.1109/IRPS.1980.362928
Filename
4208324
Link To Document