Title :
A Large Scale Reliability Study of Burnout Failure in GaAs Power FETs
Author :
Jordan, A.S. ; Irvin, J.C. ; Schlosser, W.O.
Author_Institution :
Bell Laboratories, Murray Hill, New Jersey 07974
Abstract :
Burnout can be the dominant failure mode in GaAs power FETs. Since this is a process without electrical precursors, special experimental and statistical treatment appropriate to censored data has to be employed. The resulting failure distribution is log-normal and depending on the operating conditions a maximum failure rate between 400 and 4500 FITs is projected.
Keywords :
Aging; Costs; Electron tubes; FETs; Gallium arsenide; Large-scale systems; Power system reliability; Process design; Semiconductor device reliability; Temperature;
Conference_Titel :
Reliability Physics Symposium, 1980. 18th Annual
Conference_Location :
Las Vegas, NV, USA
DOI :
10.1109/IRPS.1980.362928
