DocumentCode
2609721
Title
Gaas Mixer Diode Burnout Mechanisms at 36-94 GHz
Author
Christou, A. ; Anand, Y.
Author_Institution
Naval Research Laboratory, Washington, D.C. 20375
fYear
1980
fDate
29312
Firstpage
140
Lastpage
144
Abstract
GaAs Schottky barrier diodes fabricated with different high temperature barrier metals were investigated for CW and pulse burnout. The (TiW-Au)-GaAs, (Ti-Mo-Au)-GaAs, and Pd-GaAs diodes, optimized for 36-94 GHz operation were studied in a multi-junction configuation. The burnout mechanism was characterized by a gradual degradation in noise figure. The physical mechanism consisted of a degradation of metal-GaAs interface by the creation of Ga vacancles in the epitaxial layer and a decrease in GaAs mobility. Pulse burnout at X-band consisted of rapid metal punchthrough and catastrophic failure but with a gradual degradation in noise figure. An optimum CW burnout level of 2.0-2.5 watts was obtained with a thermal compression bonded (TiW-Au)-GaAs mixer diode at 36 GHz.
Keywords
Bonding; Degradation; Epitaxial layers; Frequency; Gallium arsenide; Millimeter wave devices; Noise figure; Schottky barriers; Schottky diodes; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium, 1980. 18th Annual
Conference_Location
Las Vegas, NV, USA
ISSN
0735-0791
Type
conf
DOI
10.1109/IRPS.1980.362930
Filename
4208326
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