DocumentCode
2609739
Title
A New Model for Light Output Degradation of Direct Band Gap Emitters
Author
Lindquist, P.F.
Author_Institution
Hewlett-Packard Co., Optoelectronics Division, 640 Page Mill Road, Palo Alto, CA 94304, (415) 493-1212
fYear
1980
fDate
29312
Firstpage
145
Lastpage
150
Abstract
A new quantitative model which describes the light output degradation of direct band gap GaAs l-xPx emitters has been developed. This model provides a non-destructive screening technique whereby the degradation can be calculated from the initial forward I-V characteristic. Good agreement with experimental results for 700nm optocoupler emitters was demonstrated.
Keywords
Atomic measurements; Current measurement; Degradation; Equations; Light emitting diodes; Photonic band gap; Radiative recombination; Semiconductor diodes; Stress; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium, 1980. 18th Annual
Conference_Location
Las Vegas, NV, USA
ISSN
0735-0791
Type
conf
DOI
10.1109/IRPS.1980.362931
Filename
4208327
Link To Document