Title :
Advances in high-efficiency GaAs solar cells
Author :
Tobin, S. ; Vernon, S. ; Wojtczuk, S. ; Bajgar, C. ; Sanfacon, M. ; Dixon, T.
Author_Institution :
Spire Corp., Bedford, MA, USA
Abstract :
The development of GaAs solar cells having a 1-sun, AM1.5 efficiency of 24.8% and a concentrator having an AM1.5 efficiency of 28.7% at 200 suns (both independently measured) is described. Corresponding AM0 efficiencies are 21.7 and 24.5%. These are among the highest independently verified efficiencies for single-junction cells without cover glasses. The reasons for the efficiency improvements are discussed. One-sun efficiencies over 26% in the near term are projected, showing that GaAs cells have not yet reached their practical efficiency limits
Keywords :
III-V semiconductors; gallium arsenide; solar cells; 24.8 percent; 28.7 percent; GaAs solar cells; concentrator; single-junction cells; Epitaxial growth; Fabrication; Gallium arsenide; Glass; Laboratories; MOCVD; Photovoltaic cells; Sun; Temperature; Testing;
Conference_Titel :
Photovoltaic Specialists Conference, 1990., Conference Record of the Twenty First IEEE
Conference_Location :
Kissimmee, FL
DOI :
10.1109/PVSC.1990.111610
