• DocumentCode
    2609791
  • Title

    High-efficiency GaAs and AlGaAs solar cells grown by molecular beam epitaxy

  • Author

    Melloch, M. ; Tobin, S. ; Bajgar, C. ; Stellwag, T. ; Keshavarzi, A. ; Lundstorm, M.S. ; Emery, K.

  • Author_Institution
    Sch. of Electr. Eng., Purdue Univ., West Lafayette, IN, USA
  • fYear
    1990
  • fDate
    21-25 May 1990
  • Firstpage
    163
  • Abstract
    One-sun AM 1.5 efficiencies of 23.8% for 0.25 cm2 area GaAs solar cells fabricated from molecular beam epitaxy (MBE) material were obtained. The performance is comparable to that obtained with metalorganic chemical vapor deposited (MOCVD) material. One-sun AM 1.5 efficiencies of 16.1% for 0.25 cm2 area Al0.22Ga 0.78As solar cells fabricated from MBE material were also obtained. This efficiency is 3.2% higher than the previously best reported efficiency of 12.9% for an Al0.2Ga0.8As solar cell fabricated from MBE material
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; molecular beam epitaxial growth; solar cells; 16.1 percent; 23.8 percent; AlGaAs solar cells; GaAs solar cells; MBE; molecular beam epitaxy; Ambient intelligence; Gallium arsenide; Inorganic materials; MOCVD; Molecular beam epitaxial growth; Organic materials; Photovoltaic cells; Power engineering and energy; Solar energy; Substrates;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialists Conference, 1990., Conference Record of the Twenty First IEEE
  • Conference_Location
    Kissimmee, FL
  • Type

    conf

  • DOI
    10.1109/PVSC.1990.111611
  • Filename
    111611
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2609791