Title :
High-efficiency GaAs and AlGaAs solar cells grown by molecular beam epitaxy
Author :
Melloch, M. ; Tobin, S. ; Bajgar, C. ; Stellwag, T. ; Keshavarzi, A. ; Lundstorm, M.S. ; Emery, K.
Author_Institution :
Sch. of Electr. Eng., Purdue Univ., West Lafayette, IN, USA
Abstract :
One-sun AM 1.5 efficiencies of 23.8% for 0.25 cm2 area GaAs solar cells fabricated from molecular beam epitaxy (MBE) material were obtained. The performance is comparable to that obtained with metalorganic chemical vapor deposited (MOCVD) material. One-sun AM 1.5 efficiencies of 16.1% for 0.25 cm2 area Al0.22Ga 0.78As solar cells fabricated from MBE material were also obtained. This efficiency is 3.2% higher than the previously best reported efficiency of 12.9% for an Al0.2Ga0.8As solar cell fabricated from MBE material
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; molecular beam epitaxial growth; solar cells; 16.1 percent; 23.8 percent; AlGaAs solar cells; GaAs solar cells; MBE; molecular beam epitaxy; Ambient intelligence; Gallium arsenide; Inorganic materials; MOCVD; Molecular beam epitaxial growth; Organic materials; Photovoltaic cells; Power engineering and energy; Solar energy; Substrates;
Conference_Titel :
Photovoltaic Specialists Conference, 1990., Conference Record of the Twenty First IEEE
Conference_Location :
Kissimmee, FL
DOI :
10.1109/PVSC.1990.111611
