Title :
Electromigration Failure in Hieavily Doped Polycrystalline Silicon
Author :
Polcari, M.R. ; Lloyd, J.R. ; Cvikevich, S.
Author_Institution :
IBM KINGSTON, KINGSTON, N.Y. 12401
Abstract :
Electromigration induced failures have been observed in both n & p doped polycrystalline silicon conductors. The location of the failure sites was found to depend upon the sign of the charge carrier. Migration of the dopant was identified as the failure mechanism.
Keywords :
Anodes; Cathodes; Conductors; Current density; Electrical resistance measurement; Electromigration; Electrons; Silicon; Temperature measurement; Temperature sensors;
Conference_Titel :
Reliability Physics Symposium, 1980. 18th Annual
Conference_Location :
Las Vegas, NV, USA
DOI :
10.1109/IRPS.1980.362936
