DocumentCode :
260988
Title :
A novel power LDMOSFET structure with high breakdown voltage
Author :
Doohyung Cho ; Gwanhoon Song ; Kwangsoo Kim
Author_Institution :
Dept. of Electron. Eng., Sogang Univ., Seoul, South Korea
fYear :
2014
fDate :
15-18 Jan. 2014
Firstpage :
1
Lastpage :
2
Abstract :
Novel power MOSFET structure based on LD-MOSFET which has no epitaxial layer is proposed in this paper. The proposed device has the breakdown voltage (BV) as 3.5 times higher than conventional LDMOSFET without increasing the resistance. Also, under the influence of wide n-drift around the oxide, it achieves relatively high Isat due to uniform electric field distribution. In this paper, Silvaco T-CAD tool is utilized to analyze the each device´s electrical characteristics.
Keywords :
electric breakdown; power MOSFET; technology CAD (electronics); BV; Silvaco T-CAD tool; breakdown voltage; electrical characteristics; power LDMOSFET structure; uniform electric field distribution; Electric fields; Epitaxial growth; Epitaxial layers; Logic circuits; MOSFET; Performance evaluation; Substrates; BV; LDMOSFET; No epitaxial; Ron.sp;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electronics, Information and Communications (ICEIC), 2014 International Conference on
Conference_Location :
Kota Kinabalu
Type :
conf
DOI :
10.1109/ELINFOCOM.2014.6914418
Filename :
6914418
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=260988
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