• DocumentCode
    260988
  • Title

    A novel power LDMOSFET structure with high breakdown voltage

  • Author

    Doohyung Cho ; Gwanhoon Song ; Kwangsoo Kim

  • Author_Institution
    Dept. of Electron. Eng., Sogang Univ., Seoul, South Korea
  • fYear
    2014
  • fDate
    15-18 Jan. 2014
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    Novel power MOSFET structure based on LD-MOSFET which has no epitaxial layer is proposed in this paper. The proposed device has the breakdown voltage (BV) as 3.5 times higher than conventional LDMOSFET without increasing the resistance. Also, under the influence of wide n-drift around the oxide, it achieves relatively high Isat due to uniform electric field distribution. In this paper, Silvaco T-CAD tool is utilized to analyze the each device´s electrical characteristics.
  • Keywords
    electric breakdown; power MOSFET; technology CAD (electronics); BV; Silvaco T-CAD tool; breakdown voltage; electrical characteristics; power LDMOSFET structure; uniform electric field distribution; Electric fields; Epitaxial growth; Epitaxial layers; Logic circuits; MOSFET; Performance evaluation; Substrates; BV; LDMOSFET; No epitaxial; Ron.sp;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electronics, Information and Communications (ICEIC), 2014 International Conference on
  • Conference_Location
    Kota Kinabalu
  • Type

    conf

  • DOI
    10.1109/ELINFOCOM.2014.6914418
  • Filename
    6914418
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=260988