DocumentCode :
2609894
Title :
A review of indium phosphide space solar cell fabrication technology
Author :
Spitzer, M. ; Dingle, B. ; Dingle, J. ; Morrison, R.
Author_Institution :
Kopin Corp., Taunton, MA, USA
fYear :
1990
fDate :
21-25 May 1990
Firstpage :
196
Abstract :
A review of the status of InP cell efficiency and of approaches to the reduction of cell cost is presented. The use of heteroepitaxial techniques such as InP-on-GaAs and InP-on-Si is discussed along with the use of chemical and mechanical techniques for removal and recovery of the substrate. The efficiency ultimately obtainable with designs made possible by such an approach is calculated
Keywords :
III-V semiconductors; indium compounds; solar cells; InP space solar cells; efficiency; fabrication; heteroepitaxial techniques; Annealing; Costs; Equations; Fabrication; Gallium arsenide; Indium phosphide; Laboratories; Photovoltaic cells; Space technology; Substrates;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialists Conference, 1990., Conference Record of the Twenty First IEEE
Conference_Location :
Kissimmee, FL
Type :
conf
DOI :
10.1109/PVSC.1990.111617
Filename :
111617
Link To Document :
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