• DocumentCode
    2609894
  • Title

    A review of indium phosphide space solar cell fabrication technology

  • Author

    Spitzer, M. ; Dingle, B. ; Dingle, J. ; Morrison, R.

  • Author_Institution
    Kopin Corp., Taunton, MA, USA
  • fYear
    1990
  • fDate
    21-25 May 1990
  • Firstpage
    196
  • Abstract
    A review of the status of InP cell efficiency and of approaches to the reduction of cell cost is presented. The use of heteroepitaxial techniques such as InP-on-GaAs and InP-on-Si is discussed along with the use of chemical and mechanical techniques for removal and recovery of the substrate. The efficiency ultimately obtainable with designs made possible by such an approach is calculated
  • Keywords
    III-V semiconductors; indium compounds; solar cells; InP space solar cells; efficiency; fabrication; heteroepitaxial techniques; Annealing; Costs; Equations; Fabrication; Gallium arsenide; Indium phosphide; Laboratories; Photovoltaic cells; Space technology; Substrates;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialists Conference, 1990., Conference Record of the Twenty First IEEE
  • Conference_Location
    Kissimmee, FL
  • Type

    conf

  • DOI
    10.1109/PVSC.1990.111617
  • Filename
    111617