DocumentCode
2609902
Title
"Recovery Characteristics of Ionic Drift Induced Failures under Time/Temperature Stress"
Author
Bell, J.J., Jr.
Author_Institution
HARRIS Semiconductor, Programs Division, P. O. Box 883, Melbourne, Florida 32901
fYear
1980
fDate
29312
Firstpage
217
Lastpage
219
Abstract
A model has been presented by Hofstein which characterizes drift of free sodium ions through silicon dioxide under positive and negative bias. This investigation examines the model to determine if it is applicable to drift recovery under zero bias conditions. A modified model is presented for the time/temperature relationship of unbiased drift recovery.
Keywords
CMOS technology; Condition monitoring; Integrated circuit reliability; Pollution measurement; Silicon compounds; Space charge; Stress; Temperature; Testing; Threshold voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium, 1980. 18th Annual
Conference_Location
Las Vegas, NV, USA
ISSN
0735-0791
Type
conf
DOI
10.1109/IRPS.1980.362942
Filename
4208338
Link To Document