Title :
"Recovery Characteristics of Ionic Drift Induced Failures under Time/Temperature Stress"
Author_Institution :
HARRIS Semiconductor, Programs Division, P. O. Box 883, Melbourne, Florida 32901
Abstract :
A model has been presented by Hofstein which characterizes drift of free sodium ions through silicon dioxide under positive and negative bias. This investigation examines the model to determine if it is applicable to drift recovery under zero bias conditions. A modified model is presented for the time/temperature relationship of unbiased drift recovery.
Keywords :
CMOS technology; Condition monitoring; Integrated circuit reliability; Pollution measurement; Silicon compounds; Space charge; Stress; Temperature; Testing; Threshold voltage;
Conference_Titel :
Reliability Physics Symposium, 1980. 18th Annual
Conference_Location :
Las Vegas, NV, USA
DOI :
10.1109/IRPS.1980.362942
