• DocumentCode
    260993
  • Title

    A vertical power MOSFET with the extended trench oxide

  • Author

    Hyeongdo Choi ; Doohyung Cho ; Gilyong Song ; Kwangsoo Kim

  • fYear
    2014
  • fDate
    15-18 Jan. 2014
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    A vertical power MOSFET with the extended trench oxide is proposed. The key feature of this device structure is that the trench oxide, which is set in the side of the device, is extended to n+ substrate. This technique decreases the corner effect of oxide and improves the tradeoff between breakdown voltage (BV) and the specific on-resistance (Ron, sp). Silvaco T-CAD tool is used for the simulation to analyze characteristics of the device.
  • Keywords
    power MOSFET; semiconductor device breakdown; semiconductor device models; technology CAD (electronics); Silvaco TCAD tool; breakdown voltage; device structure; extended trench oxide; specific on-resistance; vertical power MOSFET; Educational institutions; Electric breakdown; Electric fields; Logic gates; MOSFET; Silicon; Substrates; extended gradient oxide; extended trench oxide; vertical power MOSFET;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electronics, Information and Communications (ICEIC), 2014 International Conference on
  • Conference_Location
    Kota Kinabalu
  • Type

    conf

  • DOI
    10.1109/ELINFOCOM.2014.6914421
  • Filename
    6914421
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=260993