DocumentCode :
260993
Title :
A vertical power MOSFET with the extended trench oxide
Author :
Hyeongdo Choi ; Doohyung Cho ; Gilyong Song ; Kwangsoo Kim
fYear :
2014
fDate :
15-18 Jan. 2014
Firstpage :
1
Lastpage :
2
Abstract :
A vertical power MOSFET with the extended trench oxide is proposed. The key feature of this device structure is that the trench oxide, which is set in the side of the device, is extended to n+ substrate. This technique decreases the corner effect of oxide and improves the tradeoff between breakdown voltage (BV) and the specific on-resistance (Ron, sp). Silvaco T-CAD tool is used for the simulation to analyze characteristics of the device.
Keywords :
power MOSFET; semiconductor device breakdown; semiconductor device models; technology CAD (electronics); Silvaco TCAD tool; breakdown voltage; device structure; extended trench oxide; specific on-resistance; vertical power MOSFET; Educational institutions; Electric breakdown; Electric fields; Logic gates; MOSFET; Silicon; Substrates; extended gradient oxide; extended trench oxide; vertical power MOSFET;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electronics, Information and Communications (ICEIC), 2014 International Conference on
Conference_Location :
Kota Kinabalu
Type :
conf
DOI :
10.1109/ELINFOCOM.2014.6914421
Filename :
6914421
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=260993
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