DocumentCode
2610013
Title
Process Defects and Effects on Mosfet Gate Reliability
Author
Bolin, H.R.
Author_Institution
IBM General Technology Division, Essex Junction, VT 05452
fYear
1980
fDate
29312
Firstpage
252
Lastpage
254
Abstract
Gate failures are a significant factor in FET field failures. The role of defects (especially particulates) in the gate (thin dielectric) reliability failures on PET´s has been previously studied. However, little or no data has been reported on defect size distributions, siting information (where they are located) and density distributions over varying device sizes and topologies. In addition, little is known about correlation of all these parameters to accelerated life test failures. This study was initiated to help provide some of this information.
Keywords
Capacitors; Dielectrics; FETs; Fingers; Inspection; MOSFET circuits; Metallization; Optical films; Scanning electron microscopy; Testing;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium, 1980. 18th Annual
Conference_Location
Las Vegas, NV, USA
ISSN
0735-0791
Type
conf
DOI
10.1109/IRPS.1980.362949
Filename
4208345
Link To Document