Polysilicon emitters for silicon concentrator solar cells

Polysilicon emitters with a thermally grown interfacial oxide are examined in great detail. Both J_o and p_c are measured for the polysilicon emitter (contact) which is annealed under various conditions. J_o ⩽5×10^-14 A/cm² and p_c ~1×10^-5 Ω-cm² are obtained for n- and p-type polysilicon emitters. The results also indicate that the interfacial oxide is only broken by a very small fraction in order to have p_c ~1×10^-5 Ω-cm². Under such condition, J_o is primarily dominated by the recombination at the oxide interface