Title : 
Deeply-grooved silicon concentrator solar cells for use with prismatic covers
         
        
            Author : 
Culik, J. ; Jackson, E. ; Barnett, A.
         
        
            Author_Institution : 
AstroPower Inc., Newark, DE, USA
         
        
        
        
        
            Abstract : 
Advanced-design 22-sun silicon concentrator solar cells that are compatible with and complementary to Entech prismatic covers are based on a deep, V-grooved silicon structure which reduces the sensitivity to minority carrier diffusion length. Additional benefits of this 3-D structure are reduced front-surface reflectance, increased light absorption and trapping, enhanced carrier collection, and reduced base series resistance. Large-area (38-cm2 aperture) devices produced from 1.25-Ω-cm solar-grade silicon have open-circuit voltages as high as 683 mV and currents over 29 A. Initially, performance was limited by series resistance of the front contact due to the wide (20-mil) gridline finger spacing required to match the prismatic covers. However, cells fabricated with a finer contact grid have fill-factors of up to 0.828 at the design-point concentration
         
        
            Keywords : 
carrier lifetime; elemental semiconductors; silicon; solar cells; solar energy concentrators; 22-sun concentrator solar cells; 29 A; 683 mV; Entech prismatic covers; Si concentrator solar cells; V-grooved structure; carrier collection; fill-factors; front contact; front-surface reflectance; gridline finger spacing; light absorption; light trapping; minority carrier diffusion length; open-circuit voltages; reduced base series resistance; series resistance; Absorption; Contact resistance; Fabrication; Fingers; Laboratories; Photovoltaic cells; Reflectivity; Silicon; Surface resistance; Voltage;
         
        
        
        
            Conference_Titel : 
Photovoltaic Specialists Conference, 1990., Conference Record of the Twenty First IEEE
         
        
            Conference_Location : 
Kissimmee, FL
         
        
        
            DOI : 
10.1109/PVSC.1990.111626