Title :
Effect of displacement current on current-voltage characteristics in electrolyte-gated graphene FETs
Author :
Jun-Mo Park ; Jong-Ho Lee
Author_Institution :
Inter-Univ. Semicond. Res. Center, Seoul Nat. Univ., Seoul, South Korea
Abstract :
We investigated drain current-gate voltage (ID-VG) and ID-time (t) characteristics in electrolyte-gated graphene field effect transistors (GFETs). The counterclockwise hysteresis appearing in ID-VG curves with fast sweeping rate is caused by the displacement current, and thus limits the operating speed of electrolyte-gated GFETs. By analyzing the ID-t characteristics of electrolyte-gated GFETs having different areas of the overlap between the gate and the source/drain electrodes, the effect of the parasitic capacitance (Cpara) on the displacement current is demonstrated. The characteristics of GFETs with metal gate are also reported to verify the effect of the Cpara.
Keywords :
electrolytes; field effect transistors; graphene; GFET; counterclockwise hysteresis; current-voltage characteristics; displacement current; drain current-gate voltage characteristics; drain current-time characteristics; drain electrodes; electrolyte-gated graphene field effect transistors; fast sweeping rate; parasitic capacitance; source electrodes; Electrodes; Field effect transistors; Graphene; Hysteresis; Logic gates; Nickel; displacement current; electrolyte-gated graphene field effect transistors (GFETs); parasitic capacitance;
Conference_Titel :
Electronics, Information and Communications (ICEIC), 2014 International Conference on
Conference_Location :
Kota Kinabalu
DOI :
10.1109/ELINFOCOM.2014.6914429
