Title :
Ionization, electron attachment and drift in CHF3
Author :
Xueli, Liu ; Xuguang, Li ; Dengming, Xiao
Author_Institution :
Dept. of Electr. Enginering, Shanghai Jiao Tong Univ., Shanghai, China
Abstract :
Using a pulsed Townsend technique, this paper has measured the density-normalized effective ionization coefficient (¿-¿)/N and the electron drift velocity Ve in Trifluoromethane or fluoroform (CHF3). The overall density-normalized electric field strength E/N ranged from 120 to 350 Td (1 Td=10¿17 Vcm2). From the above plots for (¿-¿)/N, the limiting or critical field strength, (E/N)lim<120 Td, which is the value of E/N at which (¿-¿)/N=0.
Keywords :
Townsend discharge; electron attachment; organic compounds; plasma drift waves; density-normalized; effective ionization coefficient; electron attachment; electron drift velocity; fluoroform; pulsed Townsend technique; trifluoromethane; Anodes; Cathodes; Electron mobility; Ionization; Plasma materials processing; Pulse measurements; Sulfur hexafluoride; Tellurium; Velocity measurement; Voltage;
Conference_Titel :
High Voltage Engineering and Application, 2008. ICHVE 2008. International Conference on
Conference_Location :
Chongqing
Print_ISBN :
978-1-4244-3823-5
Electronic_ISBN :
978-1-4244-2810-6
DOI :
10.1109/ICHVE.2008.4774035
