• DocumentCode
    2610124
  • Title

    Ionization, electron attachment and drift in CHF3

  • Author

    Xueli, Liu ; Xuguang, Li ; Dengming, Xiao

  • Author_Institution
    Dept. of Electr. Enginering, Shanghai Jiao Tong Univ., Shanghai, China
  • fYear
    2008
  • fDate
    9-12 Nov. 2008
  • Firstpage
    718
  • Lastpage
    720
  • Abstract
    Using a pulsed Townsend technique, this paper has measured the density-normalized effective ionization coefficient (¿-¿)/N and the electron drift velocity Ve in Trifluoromethane or fluoroform (CHF3). The overall density-normalized electric field strength E/N ranged from 120 to 350 Td (1 Td=10¿17 Vcm2). From the above plots for (¿-¿)/N, the limiting or critical field strength, (E/N)lim<120 Td, which is the value of E/N at which (¿-¿)/N=0.
  • Keywords
    Townsend discharge; electron attachment; organic compounds; plasma drift waves; density-normalized; effective ionization coefficient; electron attachment; electron drift velocity; fluoroform; pulsed Townsend technique; trifluoromethane; Anodes; Cathodes; Electron mobility; Ionization; Plasma materials processing; Pulse measurements; Sulfur hexafluoride; Tellurium; Velocity measurement; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    High Voltage Engineering and Application, 2008. ICHVE 2008. International Conference on
  • Conference_Location
    Chongqing
  • Print_ISBN
    978-1-4244-3823-5
  • Electronic_ISBN
    978-1-4244-2810-6
  • Type

    conf

  • DOI
    10.1109/ICHVE.2008.4774035
  • Filename
    4774035
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2610124