Title :
Integrated distributed feedback laser and optical amplifier
Author :
Dutta, N.K. ; Lopata, J. ; Logan, R. ; Tanbun-Ek, T.
Author_Institution :
AT&T Labs., Murray Hill, NJ, USA
Abstract :
The fabrication and performance characteristics of an integrated distributed feedback (DFB) laser and optical amplifier structure are described. The structure utilizes semi-insulating Fe doped InP layers for current confinement to the active region, for electrical isolation between the two sections, and for lateral index guiding. The amplified output has a slope of 1 mW/mA of laser current with the amplifier biased at 150 mA, which is a factor of 5 larger than that for a typical laser. The laser emits near 1.55 μm and the spectral width under modulation of the amplified output is considerably smaller than that for a DFB laser for the same on/off ratio
Keywords :
distributed feedback lasers; integrated optoelectronics; optical modulation; semiconductor junction lasers; 1.55 micron; DFB laser; InP:Fe layers; active region; current confinement; distributed feedback laser; electrical isolation; fabrication; integrated structure; lateral index guiding; modulation; optical amplifier; performance characteristics; semiinsulating layers; Distributed amplifiers; Distributed feedback devices; Integrated optics; Iron; Laser feedback; Optical amplifiers; Optical device fabrication; Optical feedback; Semiconductor optical amplifiers; Stimulated emission;
Conference_Titel :
High Speed Semiconductor Devices and Circuits, 1991., Proceedings IEEE/Cornell Conference on Advanced Concepts in
Conference_Location :
Ithaca, NY
Print_ISBN :
0-7803-0491-8
DOI :
10.1109/CORNEL.1991.169991