Annealing and temperature effects on minority carriers in ion implanted silicon solar cells

Author

Nubile, P. ; Beloto, A. ; Veissid, N. ; Waldman, B. ; Pereyra, I. ; Andrade, A.

Author_Institution

Inst. de Pesquisas Espaciais, Sao Paulo, Brazil

fYear

1990

fDate

21-25 May 1990

Firstpage

295

Abstract

Silicon solar cells for use in space undergo annealing procedures during fabrication in order to improve their performance. During their operation they are subject to temperatures that can range from -200°C to +200°C. The impact of annealing procedures and temperature variations on the lifetime of minority carriers in the bulk of a silicon solar cell which will be used in the solar cell experiment of the first Brazilian satellite is studied. The solar cell fabrication and the annealing procedures adopted are discussed. The lifetime measurements are presented, and the results are analyzed

Keywords

annealing; carrier lifetime; elemental semiconductors; ion implantation; minority carriers; silicon; solar cells; -200 to 200 degC; Brazilian satellite; Si solar cells; annealing; carrier lifetimes; ion implantation; minority carriers; semiconductor; solar cell fabrication; space solar cells; temperature effects; Charge carrier lifetime; Extraterrestrial measurements; Fabrication; Ion implantation; Performance evaluation; Photovoltaic cells; Rapid thermal annealing; Rapid thermal processing; Silicon; Temperature distribution;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialists Conference, 1990., Conference Record of the Twenty First IEEE

Conference_Location

Kissimmee, FL

Type

conf

DOI

10.1109/PVSC.1990.111634

Filename

111634