Title :
Characterization of very-thin high-efficiency corrugated silicon solar cells
Author :
Uematsu, T. ; Kanda, K. ; Kokunai, S. ; Warabisako, T. ; Iida, S. ; Saitoh, T.
Author_Institution :
Hitachi Ltd., Tokyo, Japan
Abstract :
Advanced cells with a corrugated structure which have a potential of over 25% efficiency were successfully fabricated by introducing highly selective hydrazine etching and an improved photoprocess. The best performance obtained to date is 16.9% and 17.4% efficiency for 50 μm and 100 μm thick cells, respectively, with a thick SiO2 passivation layer at the front and a back-surface field (BSF) structure at the rear of the cell. The density of interface traps (DH) of the SiO2 passivation layer fabricated under modified oxidation conditions reveals very small values of the order of 1×109 to 1×1010 cm-2 -eV-1. The BSF structure applied to the rear of the cell is assumed to have an effective surface recombination velocity of the order of 1×102 cm/s
Keywords :
elemental semiconductors; etching; passivation; silicon; solar cells; 100 micron; 16.9 percent; 17.4 percent; 50 micron; Si solar cells; SiO2 passivation layer; back-surface field; corrugated silicon solar cells; front surface field; high-efficiency; interface traps; photoprocess; selective hydrazine etching; semiconductor; surface recombination; Corrugated surfaces; Etching; Fabrication; Laboratories; Oxidation; Passivation; Photovoltaic cells; Propellants; Silicon; Voltage;
Conference_Titel :
Photovoltaic Specialists Conference, 1990., Conference Record of the Twenty First IEEE
Conference_Location :
Kissimmee, FL
DOI :
10.1109/PVSC.1990.111635
