DocumentCode
2610229
Title
Developments in module ready SI backside-contact solar cells
Author
Sinton, R. ; Crane, R. ; Beckwith, S. ; Ceuvas, A. ; Greunbaum, P.E. ; Kane, D. ; Gan, J. ; King, R. ; Midkiff, N. ; Swanson, R.
Author_Institution
Stanford Univ., CA, USA
fYear
1990
fDate
21-25 May 1990
Firstpage
302
Abstract
Moderate quantities of high-efficiency Si backside-contact solar cells were fabricated. Compromises were made at the design level in order to investigate the possibilities for obtaining a high fabrication yield. The cells were tested in a module-ready state, soldered down to copper cell mounts. The efficiencies for the best cells peak at 26% for a range of 5-12 W/cm2 (50-120 suns). For a design point of 36 W/cm2, a majority of the 283 cells from two successive runs have efficiencies in a tight distribution around 23%. The performance difference between these cells and the best laboratory cells demonstrated to date (26% versus 28.3%) is primarily due to the sunward-side dopant diffusion, not present in the previous cells but incorporated in the current designs in order to make them stable to degradation in ultraviolet light. Accordingly, improved performance is expected to come primarily from improvements in stable front-surface passivations
Keywords
elemental semiconductors; silicon; solar cells; 26 percent; SI backside-contact solar cells; Si solar cells; high-efficiency; performance difference; stable front-surface passivations; sunward-side dopant diffusion; ultraviolet light; Degradation; Fabrication; Geometry; Laboratories; Lenses; Passivation; Photovoltaic cells; Process design; Sun; Testing;
fLanguage
English
Publisher
ieee
Conference_Titel
Photovoltaic Specialists Conference, 1990., Conference Record of the Twenty First IEEE
Conference_Location
Kissimmee, FL
Type
conf
DOI
10.1109/PVSC.1990.111636
Filename
111636
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