DocumentCode :
2610281
Title :
Temperature Accelerated Estimation of MNOS Memory Reliability
Author :
Ajiki, T. ; Sugimoto, M. ; Higuchi, H. ; Kumada, S.
Author_Institution :
Matsushita Electronics Corporation
fYear :
1981
fDate :
29677
Firstpage :
17
Lastpage :
22
Abstract :
A MNOS non-volatile memory has many special features and a good marketability. In spite of that it is not widely used due to its undeveloped reliability. Life test experiments were done under various application conditions to obtain an exact reliability estimation for a MNOS memory. Result of these test imply the application of erase/ write cycles prior to retention life test experiments, which is preferable for a proper estimation of life time at field operation conditions. A screening procedure at high temperature for a short time becomes possible by applying a proper acceleration factor.
Keywords :
Acceleration; Degradation; Electrons; Life estimation; Life testing; Semiconductor films; Substrates; Temperature dependence; Tunneling; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Reliability Physics Symposium, 1981. 19th Annual
Conference_Location :
Las Vegas, NV, USA
ISSN :
0735-0791
Type :
conf
DOI :
10.1109/IRPS.1981.362966
Filename :
4208365
Link To Document :
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