DocumentCode
2610281
Title
Temperature Accelerated Estimation of MNOS Memory Reliability
Author
Ajiki, T. ; Sugimoto, M. ; Higuchi, H. ; Kumada, S.
Author_Institution
Matsushita Electronics Corporation
fYear
1981
fDate
29677
Firstpage
17
Lastpage
22
Abstract
A MNOS non-volatile memory has many special features and a good marketability. In spite of that it is not widely used due to its undeveloped reliability. Life test experiments were done under various application conditions to obtain an exact reliability estimation for a MNOS memory. Result of these test imply the application of erase/ write cycles prior to retention life test experiments, which is preferable for a proper estimation of life time at field operation conditions. A screening procedure at high temperature for a short time becomes possible by applying a proper acceleration factor.
Keywords
Acceleration; Degradation; Electrons; Life estimation; Life testing; Semiconductor films; Substrates; Temperature dependence; Tunneling; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium, 1981. 19th Annual
Conference_Location
Las Vegas, NV, USA
ISSN
0735-0791
Type
conf
DOI
10.1109/IRPS.1981.362966
Filename
4208365
Link To Document