• DocumentCode
    2610281
  • Title

    Temperature Accelerated Estimation of MNOS Memory Reliability

  • Author

    Ajiki, T. ; Sugimoto, M. ; Higuchi, H. ; Kumada, S.

  • Author_Institution
    Matsushita Electronics Corporation
  • fYear
    1981
  • fDate
    29677
  • Firstpage
    17
  • Lastpage
    22
  • Abstract
    A MNOS non-volatile memory has many special features and a good marketability. In spite of that it is not widely used due to its undeveloped reliability. Life test experiments were done under various application conditions to obtain an exact reliability estimation for a MNOS memory. Result of these test imply the application of erase/ write cycles prior to retention life test experiments, which is preferable for a proper estimation of life time at field operation conditions. A screening procedure at high temperature for a short time becomes possible by applying a proper acceleration factor.
  • Keywords
    Acceleration; Degradation; Electrons; Life estimation; Life testing; Semiconductor films; Substrates; Temperature dependence; Tunneling; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Reliability Physics Symposium, 1981. 19th Annual
  • Conference_Location
    Las Vegas, NV, USA
  • ISSN
    0735-0791
  • Type

    conf

  • DOI
    10.1109/IRPS.1981.362966
  • Filename
    4208365