• DocumentCode
    2610337
  • Title

    Latent B-Radiation Damage in Hermetically Sealed NMOS Devices

  • Author

    Boyle, J.L. ; McIntyre, R.C. ; Youtz, R.E. ; Nelson, J.T.

  • Author_Institution
    Western Electric, Reading, PA 19603
  • fYear
    1981
  • fDate
    29677
  • Firstpage
    34
  • Lastpage
    37
  • Abstract
    A failure mechanism in NMOS VLSI devices has been traced to radiation damage due to residual radioactive gas found in their hermetically sealed packages. The entrapped gas is a result of hermeticity testing. This report describes the characteristic failure mode of NMOS memories and the changes in transistor characteristics that result from radiation damage. Criteria for the implementation of radioactive tracer leak testing are proposed to prevent failures.
  • Keywords
    Failure analysis; Gamma rays; Hermetic seals; Leak detection; MOS devices; MOSFETs; Packaging; Radiation detectors; Testing; Very large scale integration;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Reliability Physics Symposium, 1981. 19th Annual
  • Conference_Location
    Las Vegas, NV, USA
  • ISSN
    0735-0791
  • Type

    conf

  • DOI
    10.1109/IRPS.1981.362969
  • Filename
    4208368
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2610337