• DocumentCode
    2610379
  • Title

    Memory Retention Life at Various Environmental and Life Tests

  • Author

    Isagawa, Masaaki ; Oniyama, Hideo ; Azegami, Hideo

  • Author_Institution
    IC Department, Semiconductor Division, Tokyo Sanyo Electric Company Limited, Oizumi-cho, Ora-gun, Gunma-ken, Japan
  • fYear
    1981
  • fDate
    29677
  • Firstpage
    52
  • Lastpage
    55
  • Abstract
    The memory retention life and its repeatability was examined under conditions of high temperature storage, temperature cycling, bias operating, and high humidity, and after write/erase cycles for MNMoOS EAROMs having short memory retention life. It is shown that the high temperature storage and humidity tests are representative of all these tests, retention life during humidity tests for PED´s is generally shorter than the unrecoverable failure life, and SiN overcoating extends retention life remarkably.
  • Keywords
    EPROM; Humidity; Life estimation; Life testing; Logic testing; Nonvolatile memory; Performance evaluation; Silicon compounds; Stress; Temperature dependence;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Reliability Physics Symposium, 1981. 19th Annual
  • Conference_Location
    Las Vegas, NV, USA
  • ISSN
    0735-0791
  • Type

    conf

  • DOI
    10.1109/IRPS.1981.362973
  • Filename
    4208372