DocumentCode
2610379
Title
Memory Retention Life at Various Environmental and Life Tests
Author
Isagawa, Masaaki ; Oniyama, Hideo ; Azegami, Hideo
Author_Institution
IC Department, Semiconductor Division, Tokyo Sanyo Electric Company Limited, Oizumi-cho, Ora-gun, Gunma-ken, Japan
fYear
1981
fDate
29677
Firstpage
52
Lastpage
55
Abstract
The memory retention life and its repeatability was examined under conditions of high temperature storage, temperature cycling, bias operating, and high humidity, and after write/erase cycles for MNMoOS EAROMs having short memory retention life. It is shown that the high temperature storage and humidity tests are representative of all these tests, retention life during humidity tests for PED´s is generally shorter than the unrecoverable failure life, and SiN overcoating extends retention life remarkably.
Keywords
EPROM; Humidity; Life estimation; Life testing; Logic testing; Nonvolatile memory; Performance evaluation; Silicon compounds; Stress; Temperature dependence;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium, 1981. 19th Annual
Conference_Location
Las Vegas, NV, USA
ISSN
0735-0791
Type
conf
DOI
10.1109/IRPS.1981.362973
Filename
4208372
Link To Document