DocumentCode :
2610379
Title :
Memory Retention Life at Various Environmental and Life Tests
Author :
Isagawa, Masaaki ; Oniyama, Hideo ; Azegami, Hideo
Author_Institution :
IC Department, Semiconductor Division, Tokyo Sanyo Electric Company Limited, Oizumi-cho, Ora-gun, Gunma-ken, Japan
fYear :
1981
fDate :
29677
Firstpage :
52
Lastpage :
55
Abstract :
The memory retention life and its repeatability was examined under conditions of high temperature storage, temperature cycling, bias operating, and high humidity, and after write/erase cycles for MNMoOS EAROMs having short memory retention life. It is shown that the high temperature storage and humidity tests are representative of all these tests, retention life during humidity tests for PED´s is generally shorter than the unrecoverable failure life, and SiN overcoating extends retention life remarkably.
Keywords :
EPROM; Humidity; Life estimation; Life testing; Logic testing; Nonvolatile memory; Performance evaluation; Silicon compounds; Stress; Temperature dependence;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Reliability Physics Symposium, 1981. 19th Annual
Conference_Location :
Las Vegas, NV, USA
ISSN :
0735-0791
Type :
conf
DOI :
10.1109/IRPS.1981.362973
Filename :
4208372
Link To Document :
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