Title :
Numerical model for tunnel junctions with application to cascade solar cells
Author_Institution :
Sch. of Electr. Eng., Purdue Univ., West Lafayette, IN, USA
Abstract :
A simple recombination model for the tunneling current, suitable for incorporation in solar cell simulation codes, is proposed. This allows the entire cascaded structure to be modeled and permits the simultaneous simulation of the combined optical and electrical properties. This simple model for the tunnel junction has been incorporated into ADEPT (A Device Emulation Program and Toolbox), a one-dimensional numerical device simulator developed at Purdue University. The simulation code has been used to model an idealized AlGaAs/Ge cascade structure. Additional work in implementing the tunnel current model is necessary to improve the numerical stability of the simulation
Keywords :
III-V semiconductors; gallium arsenide; germanium; semiconductor device models; solar cells; tunnelling; A Device Emulation Program and Toolbox; ADEPT; AlGaAs-Ge solar cell; Purdue University; cascade solar cells; electrical properties; one-dimensional numerical device simulator; optical properties; recombination model; simulation codes; tunnel junctions; tunneling current; Emulation; Fabrication; Numerical models; Numerical simulation; Optical filters; Photonic band gap; Photovoltaic cells; Radiative recombination; Tunneling; Voltage;
Conference_Titel :
Photovoltaic Specialists Conference, 1990., Conference Record of the Twenty First IEEE
Conference_Location :
Kissimmee, FL
DOI :
10.1109/PVSC.1990.111645
