Title :
Characterization of antireflection films for surface-passivated crystalline silicon solar cells using spectroscopic ellipsometry
Author :
Kamataki, O. ; Iida, S. ; Saitoh, T. ; Uematsu, T.
Author_Institution :
Tokyo Univ. of Agric. & Technol., Japan
Abstract :
Spectroscopic ellipsometry has been utilized to measure complex refractive indices for TiO2-based antireflection films. The indices of the films chemically deposited at 300°C are found to vary with measurement wavelength and sample annealing temperature. By using the spectroscopic refractive indices, measured surface reflection spectra are found to coincide with calculated ones. Short-circuit current density limit values for surface-passivated, flat and V-grooved cell structures are calculated and compared as functions of SiO2 and TiO2 thicknesses. A maximum value is calculated to be 44.1 mA/cm2 for MgF2/TiO2-coated, V-grooved and passivated surfaces with SiO2 thicknesses of less than 10 nm
Keywords :
antireflection coatings; elemental semiconductors; ellipsometry; passivation; reflectometry; refractive index measurement; silicon; solar cells; MgF2-TiO2; Si solar cells; SiO2; TiO2; TiO2-based antireflection films; V-grooved surfaces; annealing temperature; antireflection films; chemically deposited films; measurement wavelength; short-circuit current density; spectroscopic ellipsometry; spectroscopic refractive indices; surface reflection spectra; surface-passivated crystalline silicon solar cells; Annealing; Crystallization; Ellipsometry; Optical films; Photovoltaic cells; Reflection; Semiconductor films; Silicon; Spectroscopy; Wavelength measurement;
Conference_Titel :
Photovoltaic Specialists Conference, 1990., Conference Record of the Twenty First IEEE
Conference_Location :
Kissimmee, FL
DOI :
10.1109/PVSC.1990.111649
