• DocumentCode
    2610539
  • Title

    Experimental measurement of the intrinsic carrier concentration of silicon

  • Author

    Sproul, A. ; Green, M.

  • Author_Institution
    Solar Photovoltaic Lab., New South Wales Univ., Kensington, NSW, Australia
  • fYear
    1990
  • fDate
    21-25 May 1990
  • Firstpage
    380
  • Abstract
    A recent review suggests that the commonly cited value of 1.45×1010 cm-3 for the silicon intrinsic carrier concentration at 300 K is inconsistent with the best available experimental data. An alternative value of 1.08×10-10 cm-3 is reported with an estimated one standard deviation uncertainty of only 3%. This appears to be the most accurate experiment determination of this parameter at any temperature. Measurements with similar accuracy at temperatures in the range of 275 to 375 K are also reported for PERC Si solar cells
  • Keywords
    carrier density; elemental semiconductors; silicon; solar cells; 275 to 375 K; PERC Si solar cells; Si solar cells; intrinsic carrier concentration; Conductivity; Photovoltaic cells; Photovoltaic systems; Silicon; Solar power generation; Surface treatment; Temperature control; Temperature distribution; Temperature measurement; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialists Conference, 1990., Conference Record of the Twenty First IEEE
  • Conference_Location
    Kissimmee, FL
  • Type

    conf

  • DOI
    10.1109/PVSC.1990.111652
  • Filename
    111652
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2610539