Title :
Key factors limiting the open circuit voltage of n+pp + indium phosphide solar cells
Author :
Goradia, Chandra ; Thesling, William ; Weinberg, Irving
Author_Institution :
Dept. of Electr. Eng., Cleveland State Univ., OH, USA
Abstract :
The problem of the presently obtained best open-circuit voltage (V oc) values of n+pp+ InP solar cells being considerably smaller than those predicted by basic theory is theoretically investigated. The values of some key parameters in the cells are obtained with a computer model by closely matching theoretical and measured curves for illuminated I-V, log Isc-Voc , and spectral response characteristics of a high-efficiency (17.9%) InP solar cell made by the Spire Corporation. An optimally designed InP solar cell with nearly the best efficiency that it is capable of providing in the n+pp+ shallow homojunction structure is described and modeled using these parameters. The performance parameters of the optimally designed solar cell are calculated, and it is shown that such a cell is capable of having an efficiency of 22.61% under 1 AM0 at 27°C (300 K). Using a baseline solar cell design which is a slightly modified and improved version of the Spire 6 cell, the key factors which limit the open-circuit voltage V oc of such a solar cell are discussed
Keywords :
III-V semiconductors; indium compounds; p-n homojunctions; solar cells; 1 AM0; 17.9 percent; 22.61 percent; 27 degC; InP solar cells; Spire 6 cell; computer model; high-efficiency; n+pp+ indium phosphide solar cells; open circuit voltage; shallow homojunction structure; spectral response characteristics; Circuits; Gallium arsenide; Indium phosphide; NASA; Photonic band gap; Photovoltaic cells; Photovoltaic systems; Solar power generation; Temperature; Voltage;
Conference_Titel :
Photovoltaic Specialists Conference, 1990., Conference Record of the Twenty First IEEE
Conference_Location :
Kissimmee, FL
DOI :
10.1109/PVSC.1990.111653