• DocumentCode
    2610592
  • Title

    Measurement of surface recombination velocity on heavily doped indium phosphide

  • Author

    Jenkins, Phillip ; Ghalla-Goradia, M. ; Faur, M. ; Bailey, Susan ; Faur, M.

  • Author_Institution
    Space Photovoltaic Res. Center, Cleveland State Univ., OH, USA
  • fYear
    1990
  • fDate
    21-25 May 1990
  • Firstpage
    399
  • Abstract
    Surface recombination velocity (SRV) on heavily zinc doped (>10 18 cm-3) n-type and p-type InP was measured as a function of surface treatment. For the limited range of substrates and surface treatments studied, SRV and surface stability depend strongly on the surface treatment. SRVs of ~105 cm/sec in both p-type and n-type InP are obtainable, but in n-type the low-SRV surfaces were unstable, and the only stable surfaces on n-type had SRVs of >106 cm/sec
  • Keywords
    III-V semiconductors; electron-hole recombination; heavily doped semiconductors; indium compounds; surface conductivity; surface treatment; zinc; InP:Zn; doped indium phosphide; n-type InP; p-type InP; semiconductor; surface recombination velocity; surface stability; surface treatment; Absorption; Equations; Indium phosphide; Photovoltaic cells; Photovoltaic systems; Radiative recombination; Solar power generation; Spontaneous emission; Surface treatment; Velocity measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialists Conference, 1990., Conference Record of the Twenty First IEEE
  • Conference_Location
    Kissimmee, FL
  • Type

    conf

  • DOI
    10.1109/PVSC.1990.111655
  • Filename
    111655
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2610592