DocumentCode :
2610745
Title :
Procedure for Testing Electrostatic Discharge Susceptibility of MOS Devices
Author :
Goel, Ajit
Author_Institution :
American Microsystems Inc., 3800 Homestead Road, Santa Clara, California 95051. (408) 246-0330
fYear :
1981
fDate :
29677
Firstpage :
200
Lastpage :
203
Abstract :
This paper describes a simple method for determining the susceptibility levels of packaged devices to electrostatic discharge (ESD) potential. Examples of protection network configurations are presented, along with failure threshold levels and the damage mechanisms.
Keywords :
Circuit testing; Condition monitoring; Electrostatic discharge; Failure analysis; MOS devices; Pins; Protection; Stress; Switches; Threshold voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Reliability Physics Symposium, 1981. 19th Annual
Conference_Location :
Las Vegas, NV, USA
ISSN :
0735-0791
Type :
conf
DOI :
10.1109/IRPS.1981.362996
Filename :
4208395
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2610745
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