DocumentCode
2610745
Title
Procedure for Testing Electrostatic Discharge Susceptibility of MOS Devices
Author
Goel, Ajit
Author_Institution
American Microsystems Inc., 3800 Homestead Road, Santa Clara, California 95051. (408) 246-0330
fYear
1981
fDate
29677
Firstpage
200
Lastpage
203
Abstract
This paper describes a simple method for determining the susceptibility levels of packaged devices to electrostatic discharge (ESD) potential. Examples of protection network configurations are presented, along with failure threshold levels and the damage mechanisms.
Keywords
Circuit testing; Condition monitoring; Electrostatic discharge; Failure analysis; MOS devices; Pins; Protection; Stress; Switches; Threshold voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium, 1981. 19th Annual
Conference_Location
Las Vegas, NV, USA
ISSN
0735-0791
Type
conf
DOI
10.1109/IRPS.1981.362996
Filename
4208395
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