DocumentCode :
2610761
Title :
Physical parameters of highly injected silicon in the modeling of concentrator solar cells
Author :
Kane, D. ; Sinton, R. ; Gan, J. ; Swanson, R.
Author_Institution :
Stanford Electron. Lab., Stanford Univ., CA, USA
fYear :
1990
fDate :
21-25 May 1990
Firstpage :
437
Abstract :
For several years, high-resistivity solar cells have been modeled successfully at Stanford using an ambipolar Auger coefficient, Ca=1.66×10-30 cm6/s, and an ambipolar diffusion constant, Da=18 cm2/s. Recently, these assumptions have been questioned, and the possibility of carrier-induced bandgap narrowing was introduced. When this was done, the dramatically different values of Ca=3.88×10-31 cm6/s and Da=9 cm2/sec were used to fit the experimentally observed performance of point-contact solar cells. A number of experiments have been performed, and it was determined that below n=2×1017/cm3, Ca=1.66×10-30 cm6/s and Da=17 cm2/sec. The remaining discrepancies between the experimental cell data and the cell modeling are discussed
Keywords :
diffusion in solids; elemental semiconductors; energy gap; semiconductor device models; silicon; solar cells; solar energy concentrators; Si solar cells; ambipolar Auger coefficient; ambipolar diffusion constant; carrier-induced bandgap narrowing; concentrator solar cells; modeling; point-contact solar cells; semiconductor; Charge carrier density; Conductivity; Fabrication; Gallium nitride; Monitoring; Numerical models; Photonic band gap; Photovoltaic cells; Silicon; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialists Conference, 1990., Conference Record of the Twenty First IEEE
Conference_Location :
Kissimmee, FL
Type :
conf
DOI :
10.1109/PVSC.1990.111662
Filename :
111662
Link To Document :
بازگشت