Title :
Modeling and fast simulation of RF-MEMS switches within standard IC design frameworks
Author :
Niessner, M. ; Schrag, G. ; Wachutka, G. ; Iannacci, J.
Author_Institution :
Inst. for Phys. of Electrotechnol., Munich Univ. of Technol., Munich, Germany
Abstract :
We present a macromodel of an electrostatically actuated and viscously damped ohmic contact RF-MEMS switch suitable for direct implementation in standard IC design frameworks. The physics-based and multi-energy domain coupled model is systematically derived on the basis of a hierarchical modeling approach. The very good agreement with measurements proves the capability of the model to predict the behavior of the RF-MEMS switch. Especially effects due to the nonlinear coupling of the different energy domains are correctly reproduced. The accurate reproduction of heavily contact-related situations within acceptable computing time is identified as an issue for future research.
Keywords :
integrated circuit design; integrated circuit modelling; microswitches; ohmic contacts; radiofrequency integrated circuits; computing time; hierarchical modeling approach; integrated circuit design; nonlinear energy domain coupling; ohmic contact RF-MEMS switch; physics-based multienergy domain coupled model; radiofrequency microelectromechanical systems; standard IC design frameworks; Biomembranes; Computational modeling; Damping; Electrostatics; Integrated circuit modeling; Mathematical model; Transient analysis;
Conference_Titel :
Simulation of Semiconductor Processes and Devices (SISPAD), 2010 International Conference on
Conference_Location :
Bologna
Print_ISBN :
978-1-4244-7701-2
Electronic_ISBN :
1946-1569
DOI :
10.1109/SISPAD.2010.5604496